Electron conduction within Landau-level tails of medium-mobility GaAs/AlGaAs heterostructures
نویسندگان
چکیده
منابع مشابه
Electron conduction within Landau level tails of medium-mobility GaAs / AlGaAs heterostructures
The temperature dependence of both components of the resistivity tensor ̺xx(T ) and ̺xy(T ) has been studied at T ≥ 4.2 K within IQHE plateaux around filling factors ν=2 and ν=4 of medium-mobility GaAs/AlGaAs heterostructures. In the middle of the mobility gap standard activated conductivity has been found with activation energies ∆ scaling well with h̄ωc/2 . At filling factors slightly below ν=2 ...
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ژورنال
عنوان ژورنال: Semiconductor Science and Technology
سال: 1997
ISSN: 0268-1242,1361-6641
DOI: 10.1088/0268-1242/12/3/005